Field effect transistor having unsaturated drain current characteristic
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United States of America Patent
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Sep 17, 1996
Issued Date -
N/A
app pub date -
May 24, 1995
filing date -
Apr 28, 1971
priority date (Note) -
Expired
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Abstract
A field effect transistor has the property that the product of its active total series resistance and its true transconductance is less than one throughout the entire range of drain voltage in the operative state of this transistor, the active total series resistance being the sum of the active resistance from source to channel, the active resistance of this channel and the active resistance from channel to drain. In order to prevent an excessive increase in the active resistance of the channel, the channel is made to have an impurity concentration as low as less than 10.sup.15 atoms/cm.sup.3, preferably less than 10.sup.14 atoms/cm.sup.3, so that the depletion layers extending from the gates grow extensively to become contiguous in such fashion in response to a small increase in the reverse gate voltage applied, that no narrow lengthy path is formed between the depletion layers. As a result, the field effect transistor of this invention has an unsaturated drain current versus drain voltage characteristic.
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