Tunnel transistor
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United States of America Patent
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Sep 3, 1996
Issued Date -
N/A
app pub date -
Jun 23, 1995
filing date -
Jul 14, 1992
priority date (Note) -
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Abstract
The present invention is to provide a compact and high speed tunnel transistor having a high input impedance, yet consuming only a small quantity of power. In a tunnel transistor according to the present invention, a gate electrode is provided via an insulating thin film on a Schottky junction which is a junction between a semiconductor and a metallic layer, a p-n.sup.+ junction between semiconductors, or an n-p.sup.+ junction between semiconductors so that an accumulation layer having a high carrier density is formed bear the surface of a semiconductor by adjusting a gate voltage Vg and thus a tunnel junction is formed between this accumulation layer and a metallic layer or a semiconductor having a high carrier density (n.sup.+ or p.sup.+) by adjusting the gate voltage Vg.
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