Apparatus for producing single crystal

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United States of America Patent

PATENT NO 5551978
SERIAL NO

08421789

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Abstract

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An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO SITIX CORPORATIONHYOGO 660

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akashi, Yoshihiro Amagasaki, JP 10 21
Okamoto, Setsuo Amagasaki, JP 9 42
Takiuchi, Kaoru Amagasaki, JP 2 5

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