Electro-optic modulator using multiple quantum well structure having stark-effect quantum Barriers and non-stark-effect quantum barriers sandwiched therebetween
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United States of America Patent
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Aug 27, 1996
Grant Date -
N/A
app pub date -
Apr 22, 1994
filing date -
Apr 24, 1993
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Expired
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Abstract
An optoelectronic semiconductor component (1) for modulating a supplied light beam is described, where the optoelectronic semiconductor component has a pin-structure (2, 3, 4). The invention provides that M semiconductor structures with carriers localized in at least one dimension (Q1-Q20; CB1-CB10) are arranged in at least two groups (G1-G10), where the semiconductor structures with carriers localized in at least one dimension belonging to one group (G1-G10), are separated by barriers (CB1-CB10), which essentially allow Starkladder transitions between the individual semiconductor structures (Q1-Q20; CB1-CB10) of each group (G1-G10), and the individual groups (G1-G10) of such coupled semiconductor structures (Q1-Q20; CB1-CB10) are separated by other barriers (B1-B11), which essentially prevent Stark-ladder transitions between the active layers (Q1-Q20) of the semiconductor structures (Q1-Q20; CB1-CB10) of a group (G1-G10) and an active layer (Q1-Q20) of another group.
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