Thermoelectric semiconductor material
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United States of America Patent
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Aug 20, 1996
Grant Date -
N/A
app pub date -
Aug 2, 1994
filing date -
Aug 4, 1993
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Abstract
A thermoelectric semiconductor material comprises Si crystal and crystal of metal silicide selected from the group consisting of Fe, Co, Cr, Mn and Ni. It is preferable that the metal silicide is .beta.-FeSi.sub.2. Moreover, the thermoelectric semiconductor material further contains at least one element selected from the group consisting of Vb, VIb, IIIb, VIII, VIIa and VIa in the atomic periodic table as an additive. This element can be used as a dopant. Furthermore, since both the phase of the Si crystal and the phase of the crystal of the metal silicide are changed to be an n-type or a p-type, a thermoelectric characteristics are improved.
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