Semiconductor member and semiconductor device having a substrate with a hydrogenated surface

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United States of America Patent

PATENT NO 5543648
SERIAL NO

08574784

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Abstract

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A semiconductor member with a monocrystalline semiconductor layer for forming a functional element. The main plane of the monocrystalline semiconductor layer has a center line average surface roughness Ra of not more than 0.4 nm when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH.sub.4 OH:H.sub.2 O.sub.2 :H.sub.2 O of 1:1:5 by volume at a washing temperature of 85.degree. C. for a washing time of 10 minutes.

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Patent Owner(s)

Patent OwnerAddress
CANON KABUSHIKI KAISHATOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miyawaki, Mamoru Isehara, JP 142 4440

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