Method for forming an oxynitride film in a semiconductor device
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United States of America Patent
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Jul 30, 1996
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N/A
app pub date -
Feb 27, 1995
filing date -
Feb 27, 1995
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Abstract
A method for forming an oxide film in a semiconductor device comprises a pre-oxidation process, a main oxidation process and a post-oxidation process. N.sub.2 O gas is used for the pre-oxidation process, a mixed gas of N.sub.2 O gas and NH.sub.3 gas is used for the main oxidation process, and N.sub.2 O gas is used for the post-oxidation process. The insulation characteristics of the oxide film are increased by introducing nitrogen, and amount of introduced nitrogen can be regulated by the controlling of amount of NH.sub.3 gas. Also, the problems encountered when NH.sub.3 gas and N.sub.2 O gas are used separately for the oxidation process can be solved by using of the mixed gas of NH.sub.3 gas and N.sub.2 O gas.
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