Plasma CVD process using a very-high-frequency and plasma CVD apparatus
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United States of America Patent
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Jul 30, 1996
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Nov 23, 1994
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Mar 23, 1993
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Abstract
A VHF plasma CVD process in which a cathode electrode is electrically divided into a plurality of elements in the axial direction of a cylindrical substrate, and a very-high-frequency energy with a frequency in the range of 60 MHz to 300 MHz is supplied to each of the divided cathode electrode elements by way of a high frequency power supply means for generating a plasma in a reaction chamber thereby forming a deposited film; and a VHF plasma CVD apparatus suitable for carrying out the VHF plasma process.
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