Metalorganic chemical vapor deposition of layered structure oxides
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United States of America Patent
Stats
-
Jun 18, 1996
Issued Date -
N/A
app pub date -
May 30, 1995
filing date -
Sep 2, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system. The ferroelectric films can be used for device applications such as in capacitors, dielectric resonators, heat sensors, transducers, actuators, nonvolatile memories, optical waveguides and displays.
First Claim
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