Self frequency doubling laser material using semiconductor microcrystallite doped glasses
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United States of America Patent
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Jun 4, 1996
Issued Date -
N/A
app pub date -
Jun 1, 1995
filing date -
Oct 17, 1991
priority date (Note) -
Expired
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Abstract
There is described a semiconductor microcrystallite doped glass that exhibits SHG, and a method of preparing, or encoding, a semiconductor microcrystallite doped glass by the simultaneous injection of fundamental and second harmonic fields, such as 1.06 .mu.m and 532 nm. More specifically, the disclosure pertains to a structure that exhibits SHG, the structure being comprised of, by example, borosilicate glass that contains CdS.sub.x Se.sub.1-x microcrystallites. Also disclosed are embodiments of devices having an optical waveguide structure formed within a glass substrate that contains semiconductor microcrystallites. The optical waveguide structure guides and contains injected radiation and also converts a portion thereof to the second harmonic. Also disclosed are optoelectronic devices that include frequency doublers, self-doubling lasant material, bichromatic optical switches, and a volume holographic medium, all of which include a glass host having semiconductor microcrystallites embedded within.
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