Method of manufacturing an antifuse with doped barrier metal layer and resulting antifuse
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United States of America Patent
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Jun 4, 1996
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N/A
app pub date -
Nov 19, 1993
filing date -
Nov 19, 1993
priority date (Note) -
Expired
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Abstract
A method of forming an antifuse in an integrated circuit having an insulating layer on a semiconductor substrate is provided. The method comprises forming a first metal interconnection layer on the insulating layer; forming a first barrier metal layer on the first metal interconnection layer; forming an amorphous silicon layer on the first barrier metal layer; forming another barrier metal layer atop the amorphous silicon layer; and forming a second metal interconnection layer on the second barrier metal layer. In at least one of the barrier metal forming steps, the barrier metal is formed by sputtering a barrier metal target which includes a semiconductor dopant, such as dopant.
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