Target component for cathode sputtering
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 4, 1996
Grant Date -
N/A
app pub date -
Jun 14, 1994
filing date -
Sep 3, 1991
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The target element (2) is formed from an inorganic compound layer (16) with a melting point above 300.degree. C. deposited on a foam or metallic felt support layer such that the layer of inorganic compound sinks to part of its depth into the support layer to define a composite layer (17). In order to form the target element, a precursor system of the inorganic compound is applied to the support layer, the assembly so formed is subjected to a pressure of between 0.1 MPa and 15 MPa, the resulting assembly is maintained at between 300.degree. C. and 1600.degree. C. and below the melting temperature of the support in order to obtain a sintered assembly. Said assembly is than cooled to an ambient temperature avoiding any sudden cooling. In order to produce the target, the element (2) is glued to a metallic substrate (4) using a conductive adhesive.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully