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Abstract

In an irradiation device for deep x-ray lithography the adjustment precision necessary for the irradiation is to be ensured and influences, which act uncontrolled on the adjusted position, substantially eliminated. An object stand is provided which is surrounded by a vacuum chamber, secured to a carrier and is movable with positioning means with respect to a beam and which has a holder suitable not only to receive an article to be irradiated but also to receive an adjusting element. Between the carrier, object stand and positioning means on the one hand and the vacuum chamber on the other hand there is a first isolating, flexible connection and between wall elements, of which one is connected to the carrier and the other is fixed to the frame, there is a second isolating, flexible connection, the surfaces of the two isolating, flexible connections acting against the external air pressure being of the same size. The vacuum chamber and a space defined by the wall elements with the second flexible connection are coupled together for pressure balancing. Such irradiation devices are usable for manufacturing technical microsystem components in accordance with a technology which has become known under the name LIEA process (Lithography with Synchrotron Radiation, Galvano shaping Forming Technology with Plastics).

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