Switching element with memory provided with Schottky tunnelling barrier
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United States of America Patent
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Apr 30, 1996
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app pub date -
Dec 20, 1994
filing date -
Dec 23, 1993
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Abstract
A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of the Schottky contact forms a tunnelling barrier for electrons during operation. It is desirable in many applications for the switching element to hold a certain switching state, such as open or closed, during a longer period. The switching element may then be used, for example, as a memory element. The dielectric (3) includes a ferroelectric material with a remanent polarization which influences a dimension of the tunnelling barrier. In this manner the switching element has various switching states depending on the remanent polarization of the dielectric (3). These switching states are held until the polarization of the dielectric (3) changes.
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