Magneto-resistive type magnetic head with a shunt layer of molybdenum
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United States of America Patent
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Apr 23, 1996
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N/A
app pub date -
Apr 13, 1994
filing date -
Apr 14, 1993
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Abstract
A magneto-resistive head has an upper shield layer, a lower shield layer spaced a distance from the upper shield layer, a magneto-resistive layer disposed over the lower shield layer, a shunt layer disposed adjacent to the magneto-resistive layer for giving a magnetic bias field to the magneto-resistive layer, and a electrode layer in contact with the magneto-resistance device and the shunt layer for providing an electric current to both of the magneto-resistive layer and the shunt layer electric current. The magneto-resistive layer, the shunt layer and the electrode layer are disposed between the upper shield and the lower shield. The shunt layer consist of molybdenum having a grain size more than 150 angstrom. The shunt layer has low specific resistance. Therefore, the thickness of the shunt layer can be reduced. As a result, the distance between the upper and lower shield layer can be reduced. Consequently, the gap length of the magneto-resistive head is narrower than prior art magnetic heads.
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