Manufacturable process for tungsten polycide contacts using amorphous silicon
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United States of America Patent
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Apr 23, 1996
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N/A
app pub date -
Apr 27, 1995
filing date -
Apr 27, 1995
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Abstract
A method for creating manufacturable polycide contacts, for use in advanced semiconductor designs using images as small as 0.35 .mu.M, has been developed. An amorphous silicon film, is used as an underlay, to assist in the growth of an overlying tungsten silicide layer. The tungsten silicide deposition is performed using tungsten hexafluoride and silane, and in conjunction with the amorphous silicon underlay, results excellent step coverage in the narrow contact hole. A nitrogen anneal, using high flow rates, optimizes the adhesion characteristics of the tungsten polycide structure.
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