Process for the preparation of a target component for cathode sputtering
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United States of America Patent
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Apr 16, 1996
Grant Date -
N/A
app pub date -
Jul 26, 1994
filing date -
Dec 13, 1991
priority date (Note) -
Expired
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Abstract
A target element is formed by creating a precursor system which may yield an inorganic material at a temperature of 300-1600 C. which is lower than the melting point of said material. The precursor system contains an inorganic additive having a melting point no higher than. The precursor system is applied to a support other than a foam or metal felt, the resulting assembly is heated to said temperature and this temperature is maintained for a sufficient time to produce said inorganic material, whereafter the assembly formed by the inorganic material and the support is gradually cooled to room temperature. To produce the target, the target element (2) is bonded to a metal substrate (4) by means of a layer (3) of conductive adhesive.
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