MOIS junction for use in a diamond electronic device

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United States of America Patent

PATENT NO 5506422
SERIAL NO

08348485

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Abstract

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A junction suitable for incorporation in diamond electronic devices, such as field effect transistors, U-V photodetectors, capacitors, charge-coupled devices, etc., comprising a double layer structure deposited on the semiconducting diamond film of the electronic device, wherein the double layer structure consists of a layer of intrinsic diamond and a layer of a carrier blocking material. The carrier blocking materials is characterized by a band structure discontinuous with that of diamond resulting in the formation of a depletion layer at the interface. A contact is then formed on this double layer structure.

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Patent Owner(s)

Patent OwnerAddress
KOBE STEEL USA INC79 T W ALEXANDER DRIVE SUITE 101 RESEARCH TRIANGLE PARK NC 27709

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dreifus, David L Cary, NC 31 950
Hartsell, Michelle L Cary, NC 7 210

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