Method for the production of reflectors
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United States of America Patent
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Apr 9, 1996
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N/A
app pub date -
Mar 2, 1993
filing date -
Mar 5, 1992
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Abstract
For the production of lightweight reflectors or mirror structures, metallic silicon of sufficient thickness is applied to a CFC or CMC substrate preform structure having the dimensions of the component to be produced by a heat treatment process, in particular at temperatures between 1300.degree. C. and 1600.degree. C. and in a vacuum or in a protective atmosphere. In this way, reflectors or mirror structures are formed directly. It is possible to work at temperatures of 300.degree.-600.degree. C. when the silicon is applied in the form of wafers which are joined to the substrate preform by way a zone of a melt eutectic incorporating a nonferrous metal. Preferably the nonferrous metal is gold.
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