Semiconductor laser having low current threshold
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United States of America Patent
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Apr 2, 1996
Grant Date -
N/A
app pub date -
Feb 14, 1994
filing date -
Feb 12, 1993
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Abstract
A semiconductor laser including a substrate, means for reducing the lateral current flow and means forming the active elements, wherein said means for reducing the lateral current flow are composed by at least three layers of which the external ones are entirely doped and the internal layers are doped only in the zones lateral to the active element so that these layers reduce the side current flow.
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