Gallium arsenide MESFET imager
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United States of America Patent
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Mar 19, 1996
Grant Date -
N/A
app pub date -
May 27, 1994
filing date -
Sep 30, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A pixel comprises a Field Effect Transistor formed on a gallium arsenide substrate wherein a source (1) of the field effect transistor is a photoresponsive element, a gate of the field effect transistor is shielded from light and acts as a switch to enable/disable readout and a drain (4) of the field effect transistor is connected to a readout line. Also disclosed an X-Y imager formed on a gallium arsenide substrate from a plurality of pixels and a processing area wherein each pixel comprises a photoresponsive source (1), a gate formed from a plurality of metal fingers (7) across the source (1), a drain (4) connected to a readout line and a gate resistor (12) connected in series with the fingers (7). The arrangement of fingers (7) across the source (1) in co-operation with the gate resistor (12) produces an enhanced optical gain.
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