Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
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United States of America Patent
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Mar 19, 1996
Issued Date -
N/A
app pub date -
Sep 16, 1993
filing date -
Sep 17, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.
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Patent Citation Ranking
- 91 Citation Count
- G01N Class
- 98.55 % this patent is cited more than
- 29 Age