Acoustic wave device and process for producing same
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United States of America Patent
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Mar 12, 1996
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N/A
app pub date -
May 5, 1994
filing date -
May 18, 1993
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Abstract
A surface acoustic wave device adapted to attain a higher acoustic velocity than conventionally by realizing SH waves excitable at a higher frequency than the fundametal mode of Rayleigh waves. Aluminum is sputtered for deposition on the R-plane of a sapphire substrate 1 using a sputter ion source, and at the same time, the R-plane of the substrate 1 is irradiated with a nitrogen ion beam having energy of 50 to 250 eV at a current density of 0.2 to 1.0 mA/cm.sup.2 using an assist ion source to form an aluminum nitride thin film 2 on the R-plane of the substrate 1 with the [00.1] axis of the film tilted with respect to a normal to the substrate.
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