Importance

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Abstract

The invention relates to a method and a generator for producing an aluminum ion flow, specifically for aluminum ion implantation in the microelectronics industry. The method includes the following steps: (i) supplying a stream of an ionization gas into the ionization chamber; (ii) providing an amount of an aluminum-containing feed material inside the ionization chamber; (iii) generating, within the ionization chamber, an electron flow by supplying an electrode with a large current; (iv) bombarding the ionization gas stream with the electron flow to create a plasma; (v) causing the plasma to attack the feed material so as to become enriched with aluminum ions; (vi) taking the plasma out of the ionization chamber; (vii) removing from the plasma, by application of a magnetic field, those ions which have a significantly different equivalent weight from the equivalent weight of the aluminum ions; all this having selected the ionization gas and feed material such that, in the plasma taken out of the ionization chamber, there will be aluminum ions present along with other ions, all having different equivalent weights from the equivalent weight of the aluminum ions.

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First Claim