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Abstract

A method for growing a diamond film, substantially free of voids, having an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1, and a diamond-to-graphite Raman ratio greater than about 25, includes the steps of preparing a substrate by abrasion with diamond particles; placing the substrate in a CVD reactor; depositing diamond during a first deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2 and 10 sccm CH.sub.4, at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining the substrate at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer which is substantially continuous; depositing a diamond during a second deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2, 4.6 sccm CO, and 9 ccm of CH.sub.4 at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of between about 2.45 GHz and maintaining said substrate material at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer having a desired thickness; and removing the substrate material from said CVD reactor.

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