Vertical heat treatment device for semiconductor
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United States of America Patent
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Feb 27, 1996
Grant Date -
N/A
app pub date -
Dec 16, 1993
filing date -
Dec 17, 1992
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Abstract
End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.
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