Method of forming a semiconductor device having a LC element
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United States of America Patent
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Feb 20, 1996
Issued Date -
N/A
app pub date -
Jun 2, 1995
filing date -
Nov 10, 1993
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Abstract
An LC element with a pn junction layer formed near the surface of a p-Si substrate by forming an n.sup.+ region having a predetermined shape and in a portion thereof additionally forming a p.sup.+ region having the same shape, and with first and second electrodes formed over entire length on the surface of this pn junction layer; wherein the two electrodes respectively function as inductors and by using the pn junction layer with reverse bias, a distributed constant type capacitor is formed between these inductors, thereby providing excellent attenuation characteristics over a wide band, a semiconductor device including the LC element, and a method of manufacturing the LC element. This LC element and semiconductor device can be easily manufactured; in the case of manufacturing as a portion of an IC or LSI device, component assembly work in subsequent processing can be abbreviated, and by changing the capacitance of the distributed constant type capacitor according to requirements, the characteristics can be changed.
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