Highly-oriented diamond film field-effect transistor
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United States of America Patent
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Feb 13, 1996
Issued Date -
N/A
app pub date -
Sep 28, 1994
filing date -
May 14, 1993
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Expired
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Abstract
A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.<10.degree., .vertline..DELTA..beta..vertline.<10.degree., .vertline..DELTA..gamma..vertline.<10.degree., simultaneously between adjacent crystal planes.
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