Method and apparatus for feeding gas into a chamber
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 6, 1996
Grant Date -
N/A
app pub date -
Oct 21, 1994
filing date -
Oct 27, 1993
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A vacuum deposition chamber alternately receives a reactive gas and an inert gas during a process in which a thin film is formed on a wafer in the chamber. The inert gas flows through a first pressure regulator, a first feed line and a first changeover valve into the chamber. The reactive gas flows through a second pressure regulator, a second feed line and a second changeover valve into the chamber. A vent line is connected to a vacuum pump and a pressure regulating valve which vents to the atmosphere to thereby control the vacuum pressure in the vent line. A first shunt valve is connected between the vent line and the first feed line and a second shunt valve is connected between the vent line and the second feed line. When the first changeover valve is opened to permit flow of reactive gas into the chamber, the second shunt valve is opened to evacuate the second feed line and when the second changeover valve is opened to permit flow of inert gas into the chamber, the first shunt valve is opened to evacuate the first feed line. By alternately evacuating the feed lines, pressure fluctuations which usually occur in the chamber at the time of changeover from one gas to the other, are suppressed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully