Method of producing silison single crystal
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United States of America Patent
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-
Dec 26, 1995
Grant Date -
N/A
app pub date -
Mar 21, 1994
filing date -
Mar 22, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A solid layer is melted from the upper part thereof by the heat of a heater while the contact area between a molten liquid layer and an inner wall of a crucible is adjusted in a Double Layered CZ method, so that the eluting amount of oxygen from the crucible to the molten liquid layer is controlled. Accordingly, silicon single crystals of the low concentration of oxygen are produced.
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