Method for manufacturing a power semiconductor component for high speed current switching
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United States of America Patent
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Dec 5, 1995
Grant Date -
N/A
app pub date -
Jun 21, 1994
filing date -
Jun 21, 1993
priority date (Note) -
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Abstract
The destruction-free rapid dismantling of current of power semiconductor components can be substantially enhanced when the inhibiting pn-junction is produced with a polished surface of the semiconductor body. The pn-junction thus becomes so uniform that local overloads are avoided. As a result, the speed of the dismantling of the current of the power semiconductor can be increased.
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