Process for manufacturing an integrated bipolar power device and a fast diode
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United States of America Patent
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Nov 21, 1995
Issued Date -
N/A
app pub date -
May 31, 1994
filing date -
Mar 28, 1991
priority date (Note) -
Expired
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Abstract
A bipolar power device and a fast diode are formed in a single chip of semiconductor material. The chip contains a first area having high minority carrier lifetimes in which the bipolar power device is formed. The bipolar power device is therefore capable of handling high current densities. At least one second area of the device is formed with reduced minority carrier lifetimes, with a fast diode being formed in this region.
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