CMOS image sensor with pixel level A/D conversion
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United States of America Patent
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Oct 24, 1995
Grant Date -
N/A
app pub date -
Feb 15, 1994
filing date -
Feb 15, 1994
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Abstract
An image sensor formed using a CMOS process is described herein which includes a pixel array core of phototransistors whose conductivities are related to the magnitude of light impinging upon the phototransistors. The analog signals generated by the phototransistors are converted to a serial bit stream by an A/D converter connected at the output of each phototransistor and formed in the immediate area of each phototransistor within the array core. Thus, a separate digital stream for each pixel element is output from the array core, and parasitic effects and distortion are minimized. In one embodiment, a filter circuit is connected to an output of the array core for converting the individual digital streams from each pixel element to multi-bit values corresponding to the intensity of light impinging on the phototransistor.
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