Process for making a power MOSFET device and structure
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United States of America Patent
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Oct 24, 1995
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app pub date -
Aug 29, 1994
filing date -
Aug 29, 1994
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Abstract
A method for making a stable low threshold voltage p-channel power MOSFET device having a p-type gate layer (14) includes incorporating a p-type dopant into the gate layer (14) formed over a gate oxide layer (13). The p-type dopant is incorporated within the gate layer (14) under conditions that minimize diffusion of p-type dopant through the gate oxide layer (13) into the channel regions (31, 32). The process reduces the number of process steps necessary to manufacture a power MOSFET device.
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