Image reversal method for repairing defective areas on microelectronic substrates
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United States of America Patent
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-
Oct 17, 1995
Grant Date -
N/A
app pub date -
Apr 28, 1994
filing date -
Apr 28, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A defective area on a microelectronic substrate is repaired using an image reversal photoresist and image reversal process. The defective area on a microelectronic substrate is identified and a layer of image reversal photoresist is applied to the microelectronic substrate. The image reversal photoresist is then exposed twice in an image reversal process, and the image reversal photoresist is then removed over the defective area. A repair material is then blanket deposited, and the image reversal photoresist is removed in a lift-off operation such that the material on the defective area remains. Missing lines and broken lines may be repaired. Conductive and dielectric materials may be repaired.
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