Method for etching a diamond film
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United States of America Patent
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Oct 17, 1995
Issued Date -
N/A
app pub date -
Apr 5, 1994
filing date -
Dec 20, 1991
priority date (Note) -
Expired
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Abstract
Techniques for synthesizing diamond films include a method for anisotropically etching a diamond film. The method includes the steps of selectively patterning a mask layer on a surface of a diamond film and then subjecting the mask layer and exposed surface portions of the diamond film to a hydrogen-containing plasma, while negatively biasing the diamond film to convert the exposed surface portions of the diamond layer to nondiamond carbon. Negatively biasing the diamond film in the hydrogen-containing plasma causes an emission of electrons to thereby convert exposed diamond surface portions to nondiamond carbon. The hydrogen-containing plasma continuously removes the nondiamond carbon from the surface and maintains the electron emission efficiency of the exposed diamond surface so that further etching can take place.
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