Fabricating electrical contacts in semiconductor devices
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United States of America Patent
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Sep 12, 1995
Issued Date -
N/A
app pub date -
Jul 19, 1991
filing date -
Jun 13, 1989
priority date (Note) -
Expired
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Abstract
A method of fabricating an electrical contact in a semiconductor device comprises providing on an underlying silicon substrate a reflowable interlevel dielectric material having a contact opening exposing a contact region of the silicon substrate. The silicon substrate and the interlevel dielectric material are heated by a rapid thermal anneal in an oxygen-containing atmosphere thereby to grow an oxide control layer in the contact region and to reflow the dielectric material. A layer of transition metal is deposited over the reflowed dielectric material and the control layer and at least part of the transition metal layer is converted into a metallurgic barrier.
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