Method of manufacturing a motion sensor
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United States of America Patent
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Sep 5, 1995
Grant Date -
N/A
app pub date -
Apr 5, 1994
filing date -
Apr 7, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The method comprises the steps of providing a substrate wafer (10); depositing a first layer of resist (12) upon the substrate wafer (10); removing selected areas of the first resist layer (12), thereby to provide first etch windows; forming first cavities (16) in the substrate wafer (10) by a first etching process through the first windows; bonding a relatively thick membrane wafer (24) to the substrate wafer (10), thereby covering the cavities (16); polishing the surface of the relatively thick membrane wafer (24) thereby to produce a relatively thin membrane (24a); depositing a second layer of resist (33) on the relatively thin membrane (24a); removing selected areas of the second deposited resist layer, thereby to provide second etch windows (40); etching away the relatively thin membrane (24a) in the region of the second etch windows (40) until the first cavities (16) are exposed, thereby to form in the relatively thin membrane (24a) a free standing resonator structure (18 ) suspended on a plurality of compliant beam mounts (38) extending from a fixed portion (50).
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