Method and apparatus for manufacturing semiconductor devices
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United States of America Patent
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Aug 29, 1995
Issued Date -
N/A
app pub date -
Oct 12, 1994
filing date -
Oct 23, 1991
priority date (Note) -
Expired
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Abstract
A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subjected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possible without causing slip lines.
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