Method and apparatus for forming thin film and multilayer film

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United States of America Patent

PATENT NO 5443646
SERIAL NO

08322106

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Abstract

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A thin film is formed on a substrate in a reaction chamber using a photo CVD technique by decomposing a reactive gas supplied to the reaction chamber by means of light irradiated through a light introducing window. The reduction in film deposition rate due to clouding of the light introducing window is corrected in order to form a thin film of a desired film thickness.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRIC INDUSTRIAL CO LTDOSAKA JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mutoh, Katsuhiko Kanagawa, JP 16 594
Yamada, Yuka Kanagawa, JP 110 1211

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