Antifuse with double via contact and method of manufacture therefor
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United States of America Patent
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-
Aug 8, 1995
Grant Date -
N/A
app pub date -
Feb 23, 1994
filing date -
Feb 23, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides for a method of forming an antifuse in an integrated circuit having a first insulating layer on a semiconductor substrate. The method comprises forming a first metal interconnection layer on the first insulating layer; forming a programming layer on the first metal interconnection line; forming a relatively thin, second insulating layer over the programming layer; forming a first aperture through the second insulating layer where the antifuse is to be located to expose a portion of the programming layer; forming a barrier metal layer on the second insulating layer and in said first aperture to contact the portion of said programming layer; forming a relatively thick, third insulating layer on the barrier metal layer; forming a second aperture to expose a portion of the barrier metal layer; and forming a second metal interconnection layer on the third insulating layer and in the second aperture to contact the portion of the second barrier metal layer.
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