Power MOSFET
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United States of America Patent
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Aug 1, 1995
Issued Date -
N/A
app pub date -
Mar 25, 1994
filing date -
Mar 25, 1993
priority date (Note) -
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Abstract
A power MOSFET includes a semiconductor body having first and second surfaces. An inner zone of a first conduction type has a given dopant concentration. At least one base zone of a second conduction type is adjacent the inner zone and the first surface. At least one source zone is embedded in the at least one base zone. At least one drain zone is adjacent one of the surfaces. Additional zones of the second conduction type are disposed in the inner zone inside a space charge zone developing when a blocking voltage is present. At least one additional zone of the first conduction type is disposed between the additional zones of the second conduction type and is doped higher than the inner zone. The additional zones have a dopant level and the additional zones of the second conduction type are mutually spaced apart, for depleting charge carriers when a blocking voltage is applied.
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