Method of depositing anti-doming material to prevent doming of a shadow mask
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United States of America Patent
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Jul 18, 1995
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app pub date -
Sep 16, 1994
filing date -
Dec 22, 1990
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Abstract
A method for producing a shadow mask not susceptible to doming which includes in the preferred embodiment the step of heating boron in a vacuum atmosphere of 5.times.10.sup.-5 Torr at 2500.degree.-2600.degree. C. for 12-20 sec to deposit a boron layer of 1 .mu.m on the surface of a shadow mask and introducing nitrogen gas for 12-20 sec with maintaining the vacuum level of 10.sup.-4 Torr to form a boron nitride layer of 2 .mu.m. Titanium is then deposited in a vacuum atmosphere of 5.times.10.sup.-5 Torr at 2400.degree.-2600.degree. C. for 25-35 sec to form a titanium layer of 1-2 .mu.m on the boron nitride layer. The boron nitride layer having low thermal expansion coefficient prevents deformation by doming and the titanium layer having the good conductivity enables the anode voltage to be applied to the shadow mask.
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