Semiconductor devices containing power and control transistors
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United States of America Patent
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Jul 11, 1995
Grant Date -
N/A
app pub date -
Apr 16, 1992
filing date -
Oct 1, 1986
priority date (Note) -
Expired
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Abstract
The base region of the power stage and the horizontal isolation region of the integrated control circuit or collector region of a transistor of an integrated circuit consist of portions of an epitaxial layer with a first conductivity type grown in sequence on an underlying epitaxial layer with a second conductivity type opposite the first.
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