Continuous thin diamond film and method for making same
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United States of America Patent
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Jul 11, 1995
Issued Date -
N/A
app pub date -
Aug 21, 1991
filing date -
Oct 3, 1988
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A continuous thin diamond film having a thickness of less than about 2 microns has a permeability to helium lower than about 1.times.10.sup.-6 standard cubic centimeters of helium per second per square millimeter of surface area. The thin diamond film may be supported on a supporting grid and may be incorporated into an x-ray window. The thin diamond film of the present invention may be formed in a two-stage growth process wherein a first stage a carbonaceous gas at a first concentration is introduced in to the reactor and in a second stage the concentration of the carbonaceous gas is reduced to a second lower concentration.
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Cited Art Landscape
Patent Citation Ranking
- 30 Citation Count
- B32B Class
- 72.40 % this patent is cited more than
- 30 Age