Non-plasma cleaning method for semiconductor manufacturing apparatus

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United States of America Patent

PATENT NO 5421902
SERIAL NO

08235895

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Abstract

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When removing a laminar deposit existing in a thin film forming operational system of a semiconductor manufacturing apparatus, a mixture gas prepared by mixing nitrogen trifluoride gas with a fluoric gas is introduced into the thin film forming operational system so as to be brought into contact in a non-plasma state with the laminar deposit.

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Patent Owner(s)

Patent OwnerAddress
IWATANI SANGYO KABUSHIKI KAISHA (IWATANI INTERNATIONAL CORPORATION)4-8 HOMMACHI 3-CHOME CHUO-KU OSAKA-SHI OSAKA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nogami, Chitoshi Osaka, JP 2 30
Odajima, Hideki Osaka, JP 1 6
Saeda, Manabu Moriyama, JP 2 112
Suzuki, Masanori Moriyama, JP 203 2878

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  • 6 Citation Count
  • B08B Class
  • 4.32 % this patent is cited more than
  • 30 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges7835512211101 - 1011 - 2021 - 3031 - 4041 - 5051 - 60100 +051015202530354045505560657075808590

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