Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure
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United States of America Patent
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May 23, 1995
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N/A
app pub date -
Feb 28, 1994
filing date -
Mar 2, 1993
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Abstract
The present invention is to provide a static induction semiconductor device with a distributed main electrode structure and a static induction semiconductor device with a static induction main electrode shorted structure where the main electrode region is composed of regions of higher and lower impurity densities relative to each other and formed partly in contact with the lower impurity density region as well, and alternatively a static induction short-circuit region opposite in conductivity type to the main electrode region is formed in the lower impurity density region surrounded by the higher impurity density region.
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