Method of reducing leakage current in an integrated circuit
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United States of America Patent
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May 16, 1995
Issued Date -
N/A
app pub date -
Oct 14, 1993
filing date -
May 11, 1993
priority date (Note) -
Expired
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Abstract
A method is provided for reducing leakage current in an integrated circuit (24). A first doped region (18) having a first conductivity type is formed in a semiconductor layer (10) having a second conductivity type, such that a second doped region (20) having the first conductivity type is formed in the semiconductor layer (10). The second doped region (20) is less conductive than the first doped region (18). The first doped region (18) is removed from the semiconductor layer (10), such that the second doped region (20) substantially remains in the semiconductor layer (10). The integrated circuit (24) is formed to include the second doped region (20) and the semiconductor layer (10).
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