Plasma processing apparatus
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United States of America Patent
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May 9, 1995
Issued Date -
N/A
app pub date -
Nov 4, 1991
filing date -
Sep 24, 1985
priority date (Note) -
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Abstract
In a plasma etching apparatus, a workpiece is mounted on a lower electrode positioned opposite to an upper electrode , a ring-shaped spacer made of a dielectric material is provided on the outer peripheral portion of the lower electrode. When the RF power is supplied between the upper and lower electrodes, the plasma is generated only in a region defined by the upper and lower electrodes surrounded by the dielectric spacer.
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