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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
F T L CO LTD	KAWASAKI-SHI KANAGAWA

International Classification(s)

• C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Takagi, Mikio	Kanagawa, JP	46	1268
# of filed Patents : 46 Total Citations : 1268

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Patent Citation Ranking

• 21 Citation Count
• C23C Class

• 72.19 % this patent is cited more than
• 30 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent No: 5407485

Apparatus for producing semiconductor device and method for producing semiconductor device

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Abstract

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In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.

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Description

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